Orbital Occupation, Local Spin, and Exchange Interactions in
- 15 November 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 83 (20) , 4136-4139
- https://doi.org/10.1103/physrevlett.83.4136
Abstract
A local-density-approximation (LDA) and band structure study of various phases of shows that the most prominent (spin- ) models used to describe the semiconductor-metal transition are not valid. We find that the large on-site Coulomb and exchange interactions result in a total spin of 1 rather than and especially an orbital occupation which largely removes the orbital degeneracy. The calculated magnetic structure is consistent with experiment, again without the need for orbital ordering. These results strongly suggest that the phase transition in which is so often quoted as the example of a spin- Mott-Hubbard system have a different origin.
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This publication has 19 references indexed in Scilit:
- Metallic oxidesPublished by Elsevier ,2003
- Orbital Occupancy Order in: Resonant X-Ray Scattering ResultsPhysical Review Letters, 1999
- Optical Conductivity in Mott-Hubbard SystemsPhysical Review Letters, 1995
- Discontinuous metal-insulator transitions and Fermi-liquid behavior of correlated electronsPhysical Review Letters, 1987
- Metal-insulator transition in pure and Cr-dopedPhysical Review B, 1978
- Insulating phase of: An attempt at a realistic calculationPhysical Review B, 1978
- Magnetic structure ofin the insulating phasePhysical Review B, 1978
- Unified model of the insulator-metal transition in and the high-temperature transitions inPhysical Review B, 1975
- Mott Transition in Cr-DopedPhysical Review Letters, 1969
- Inhomogeneous Electron GasPhysical Review B, 1964