Millimeter-wave photonic integrated circuit technologies for high-speed wireless communications applications

28 September 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 01936530,p. 448-449
https://doi.org/10.1109/isscc.2004.1332787

Abstract

This paper describes an IC technology for high-speed wireless-link systems, using photonic techniques, which provides 10 Gb/s at 120 GHz. Optical signals are converted to electrical signals and radiated into freespace using Si-based circuitry. Both the preamp and PA utilize 0.1 /spl mu/m gate InAlAs/InGaAs HEMTs with gains of 6-10 dB and 8.5 dB, respectively.

Keywords

MILLIMETER WAVE INTEGRATED CIRCUITS
MILLIMETER WAVE TECHNOLOGY
PHOTONIC INTEGRATED CIRCUITS
INTEGRATED CIRCUIT TECHNOLOGY
WIRELESS COMMUNICATION
HIGH SPEED INTEGRATED CIRCUITS
HIGH SPEED OPTICAL TECHNIQUES
INDIUM COMPOUNDS
INDIUM GALLIUM ARSENIDE
HEMTS

This publication has 2 references indexed in Scilit:

Microwave photonics
IEEE Transactions on Microwave Theory and Techniques, 2002
Microfabrication technology for high-speed Si-based systems
Published by SPIE-Intl Soc Optical Eng ,2000