Specific heat of amorphousMoxGe1−xthrough the metal-insulator transition

We have made absolute specific-heat measurements through the metal-insulator transition in thin-film ${\mathrm{Mo}}_x{\mathrm{Ge}}_{1-x}$. We report results for $\gamma$ and $\beta$ and infer the thermodynamic electronic density of states. The density of states shows no critical behavior at the metal-insulator transition. There is also evidence of anomalous excess specific heat below the metal-insulator transition. We compare our results to current theories on localization and electron interactions.