Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor
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- 6 May 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (18) , 3433-3435
- https://doi.org/10.1063/1.1473685
Abstract
The resonant detection of subterahertz radiation by two-dimensional electron plasma confined in a submicron gate GaAs/AlGaAs field-effect transistor is demonstrated. The results show that the critical parameter that governs the sensitivity of the resonant detection is ωτ, where ω is the radiation frequency and τ is the momentum scattering time. By lowering the temperature and hence increasing τ and increasing the detection frequency ω, we reached ωτ∼1 and observed resonant detection of 600 GHz radiation in a 0.15 μm gate length GaAs field-effect transistor. The evolution of the observed photoresponse signal with temperature and frequency is reproduced well within the framework of a theoretical model.Keywords
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