TDEG in In 0.53 Ga 0.47 As-InP heterojunction grown by chloride VPE
- 23 June 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (13) , 473-474
- https://doi.org/10.1049/el:19830321
Abstract
We report the first successful growth of selectively doped In0.53Ga0.47As-InP hcterojunctions by the chloride vapour phase epitaxy, and the observation of TDEG with a maximum electron mobility of 106 000 cm2 V−1 s−1 at 4.2 K.Keywords
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