A coplanar-to-microstrip transition for W-band circuit fabrication with 100- mu m-thick GaAs wafers

1 February 1993

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters

Vol. 3 (2) , 29-31
https://doi.org/10.1109/75.196031

Abstract

Results on a via-hole interconnect that links a coplanar waveguide (CPW) on one side of a 100 mu m-thick GaAs substrate to a microstrip line on the opposite side are presented. The measured insertion loss of a pair of back-to-back connections is 0.3 dB between 26.5 and 40 GHz. A lumped-element equivalent circuit of this via-hole interconnect has been extrapolated to W-band and used to design amplifiers at 94 GHz.

Keywords

This publication has 3 references indexed in Scilit:

Monolithic GaAs W-band pseudomorphic MODFET amplifiers
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
Grounding microstrip lines with via holes
IEEE Transactions on Microwave Theory and Techniques, 1992
Modeling via hole grounds in microstrip
IEEE Microwave and Guided Wave Letters, 1991