THE THEORY OF TRANSPORT IN AMORPHOUS SEMICONDUCTORS

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Abstract
The theory of transport in disordered systems is approached using the Master equation point of view. Emphasis is laid on a microscopic interpretation. An approximate selfconsistent theory is presented with which it is possible to evaluate hopping d.c and a.c conductivity and Hall mobility. The theory is compared with computer simulations and experiments on amorphous semiconductors. The method is extended to treat diffusion limited relaxation and recombination and applied to evaluate the spin-lattice relaxation time of electronic and nuclear spins in amorphous semiconductors

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