Extremely High Etch Rates of In‐Based III‐V Semiconductors in BCl3 / N 2 Based Plasma
- 1 October 1996
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 143 (10) , 3394-3396
- https://doi.org/10.1149/1.1837218
Abstract
Extremely high etch rates of InGaP and InP are observed as is added to discharges. The etch rates of ∼2.0 μm/min and ∼1.8 μm/min for InGaP and InP, respectively, are achieved at 100°C with 1000 W of electron cyclotron resonance power and −145 V self‐bias. Optical emission spectra show increases of intensities for and emissions with the presence of in plasmas as well as an additional BN emission at 385.6 nm. This trend of increasing emission intensity is consistent with the increase of etching rate with discharge. A low threshold current, 9.7 mA, InGaAs/GaAs/InGaP ridge lasers with a ridge width and cavity length of 1.4 and 750 μm, respectively, were also demonstrated with this etching processing.This publication has 0 references indexed in Scilit: