Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AIGaAs by high-pressure photoluminescence
- 1 August 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (8) , 509-516
- https://doi.org/10.1007/bf02666010
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Hydrostatic pressure coefficients of the photoluminescence of As/GaAs strained-layer quantum wellsPhysical Review B, 1990
- Pressure dependence of photoluminescence inAs/GaAs strained quantum wellsPhysical Review B, 1990
- Pressure dependence of the valence-band discontinuity in GaAs/AlAs and GaAs/As quantum-well structuresPhysical Review B, 1989
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown As/GaAs quantum wellsPhysical Review B, 1988
- Theory of the hole subband dispersion in strained and unstrained quantum wellsPhysical Review B, 1986
- Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsetsJournal of Vacuum Science & Technology B, 1986
- High-pressure studies of GaAs-As quantum wells of widths 26 to 150 ÅPhysical Review B, 1986
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976