Intense recombination radiation and room-temperature lasing in CdS excited by high-voltage rf current pulses
- 15 October 1973
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (8) , 465-466
- https://doi.org/10.1063/1.1654960
Abstract
Intense recombination radiation has been observed in CdS crystals along certain crystallographic planes when excited by short high-voltage rf pulses applied through an electrical contact. The addition of high-reflectivity dielectric mirrors provides a Fabry-Perot cavity in which pulsed lasing occurs at room temperature. Some mechanisms are suggested for the new form of high-density excitation, and possible implications are discussed.Keywords
This publication has 3 references indexed in Scilit:
- Semiconductor lasers pumped by pulsed electric discharge in vacuumApplied Physics Letters, 1973
- OBSERVATION OF LIGHT EMISSION FROM SEMICONDUCTING CdS IN THE CURRENT OSCILLATORY MODE AT 77°KApplied Physics Letters, 1966
- Edge Emission in CdS Crystals that Show Mechanically Excited EmissionPhysical Review B, 1962