Silane silicidation of Mo thin films
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (11) , 5981-5985
- https://doi.org/10.1063/1.327518
Abstract
Silicidation of molybdenum thin films has been obtained for the first time from the reaction of molybdenum with silane (SiH4). Auger electron spectroscopy measurements indicate a uniform MoSi2 film has been grown. X‐ray diffraction data show that films silicidized at relatively high flow rates have a dominant Mo component along with a significant hexagonal MoSi2 phase. Post‐reaction annealing in H2 results in the complete disappearance of Mo with the concurrent increase of various silicide phases (MoSi2, Mo3Si). The growth kinetics were investigated as a function of reaction time and temperature and reactant flow rate. The sheet resistance of the reacted films can be controllably varied between that of Mo and of MoSi2. Post‐silicidation annealing behavior was found to be strongly ambient dependent. Oxidation of the reacted films resulted in a uniform SiO2 overlayer.This publication has 4 references indexed in Scilit:
- Size effects in MoSi2-gate MOSFET’sApplied Physics Letters, 1980
- Thin film interaction between titanium and polycrystalline siliconJournal of Applied Physics, 1980
- 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspectiveIEEE Transactions on Electron Devices, 1979
- A New MOS Process Using MoSi2as a Gate MaterialJapanese Journal of Applied Physics, 1978