A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation
- 1 April 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (4) , 389-396
- https://doi.org/10.1016/0038-1101(91)90169-y
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effectsPhysical Review B, 1988
- Electron energy distribution for calculation of gate leakage current in MOSFETsSolid-State Electronics, 1988
- MOSFET substrate current model including energy transportIEEE Electron Device Letters, 1987
- Tradeoffs and electron temperature calculations in lightly doped drain structuresIEEE Electron Device Letters, 1985
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- High-Field Transport in- Type GaAsPhysical Review B, 1968
- On the Scattering Processes in SemiconductorsPhysica Status Solidi (b), 1967
- Maximum Anisotropy Approximation for Calculating Electron Distributions; Application to High Field Transport in SemiconductorsPhysical Review B, 1964
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956