GaAlAs/GaAs heterojunction bipolar phototransistors grown by LPE with a current gain of 50 000
- 21 November 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (24) , 1124-1126
- https://doi.org/10.1049/el:19850797
Abstract
A simple mesa GaAlAs/GaAs heterojunction bipolar phototransistor fabricated by LPE growth technique is presented. A high current gain of the order of 50 000 has been obtained and is believed to be the highest ever reported for a bipolar device. The corresponding high sensitivity is about 15 000 A/W for an 800 nm illumination wavelength.Keywords
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