A planarized multilevel interconnect scheme with embedded low-dielectric-constant polymers for sub-quarter-micron applications

17 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 73-74
https://doi.org/10.1109/vlsit.1994.324371

Abstract

The new embedded polymer structure combines the advantages of SiO/sub 2/ and low dielectric constant of polymeric materials. The interconnect performance is improved through line-to-line capacitance reduction by utilizing polymer only between tightly spaced lines. Double-level-metal interconnect structures have been successfully fabricated using a variety of low-dielectric-constant insulators. The new multilevel interconnect scheme alleviates many of the integration and reliability problems associated with polymers, and can be easily adopted to standard production process.

Keywords

POLYMERS
CAPACITANCE
THERMAL CONDUCTIVITY
ETCHING
CROSSTALK
DIELECTRICS AND ELECTRICAL INSULATION
DIELECTRIC CONSTANT
DIELECTRIC MATERIALS
THERMAL STABILITY
CONDUCTING MATERIALS

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