HOT ELECTRON RELIABILITY OF DEEP SUBMICRON MOS TRANSISTORS

1 September 1988

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 49 (C4) , C4-665
https://doi.org/10.1051/jphyscol:19884139

Abstract

The hot electron induced degradation of fully optimized N-channel MOSFET's, having channel lengths in the range 0.3 µm - 0.6 µm, is systematically investigated. The created defects and their influence on the device performance are evaluated with very sensitive techniques and explained using 2D modelling. The device lifetime is analysed as a function of the biasing conditions. These results are interpreted by taking into consideration the extension of the defective region as well as the local generation rate of interface states

Keywords

MOS TRANSISTORS
HOT ELECTRON
ELECTRON RELIABILITY
DEEP SUBMICRON MOS

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