Hole-Injection-Induced Structural Transformation of Oxygen Vacancy in α-Quartz
- 1 February 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (2B) , L232
- https://doi.org/10.1143/jjap.37.l232
Abstract
Charge-state-dependent structural stability of oxygen vacancy in α-quartz is determined by using first-principles total-energy calculations. It is found that neutral and positively charged oxygen vacancies show bistability, and that a spontaneous structural transformation occurs for doubly positively and doubly negatively charged states. The structural transformation induces a new electron trap, possibly causing the degradation of SiO2 thin films.Keywords
This publication has 10 references indexed in Scilit:
- Structure and Hyperfine Parameters ofCenters in-Quartz and in VitreousPhysical Review Letters, 1997
- Mechanism of stress-induced leakage current in MOS capacitorsIEEE Transactions on Electron Devices, 1997
- Oxygen vacancy in α-quartz: A possible bi- and metastable defectPhysical Review B, 1993
- Vacancy in Si: Successful description within the local-density approximationPhysical Review Letters, 1992
- Efficient pseudopotentials for plane-wave calculationsPhysical Review B, 1991
- Local Density Approximation Total Energy Calculations for Silica and Titania Structure and DefectsJournal of the American Ceramic Society, 1990
- High-field-induced degradation in ultra-thin SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 1988
- First-Principles Pseudopotential Total-Energy Calculations for Elemental, Compound and Alloy SemiconductorsJournal of the Physics Society Japan, 1987
- Oxygen vacancy and thecenter in crystallinePhysical Review B, 1987
- Ground State of the Electron Gas by a Stochastic MethodPhysical Review Letters, 1980