Secondary breakdown in transistors

• 1 April 1964
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 52  (4) , 439-440
• https://doi.org/10.1109/proc.1964.2971

Abstract

Keywords

• ELECTRIC BREAKDOWN
• BREAKDOWN VOLTAGE
• TEMPERATURE
• AVALANCHE BREAKDOWN
• DOPING
• SPACE CHARGE
• CAPACITANCE
• DIODES
• PULSE CIRCUITS
• PULSE MODULATION