A Study of Contamination during Reactive Ion Etching of SiO2

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Abstract
Plasma‐wall interaction during the reactive ion etching of silicon dioxide was studied with Auger electron spectroscopy. An Al containing film was observed to deposit on the substrate to be etched, slowing down or even stopping the etching process; a fluorocarbon film due to plasma polymerization was also found to grow on the contaminating film. The coverage of the cathode surface by a thick continuous fluorocarbon film effectively avoids this plasma‐wall interaction, and allows the etching process to continue to the interface.

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