Dangling bonds in Si and Ge during laser irradiation
- 30 October 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (30) , 5505-5514
- https://doi.org/10.1088/0022-3719/13/30/015
Abstract
It is shown how laser irradiation affects the geometric and electronic properties of dangling bond sites in Si and Ge. Due to strong electron-phonon coupling, a variation of the relative populations of their fundamental and excited electronic states induces changes in the geometric configurations of dangling bond sites. The processes involved are different for isolated dangling bonds, monovacancy, dislocations and crystal surface.Keywords
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