Efficient second-harmonic power extraction fromGaAs TUNNETT diodes above 200 GHz
- 25 June 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (13) , 1324-1326
- https://doi.org/10.1049/el:19980963
Abstract
GaAs TUNNETT diodes on diamond heat sinks yielded state-of-the-art RF power levels of 9 and > 4 mW with corresponding DC-to-RF conversion efficiencies of > 1.0 and > 0.6% in a second-harmonic mode at 209 and 235 GHz, respectively. The phase noise was well below –94 dBc/Hz at a carrier frequency of 500 kHz. Simulations revealed a varactor-like mode of operation.Keywords
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