Recombination radiation from vacuum splits in GaAs
- 30 April 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (4) , 439-440
- https://doi.org/10.1016/0038-1101(70)90154-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Gas adsorption and X-ray studies of internal mated splits in Ge and SiSurface Science, 1969
- Influence of volume dope on Fermi level position at gallium arsenide surfacesSurface Science, 1967
- Atomic Mating of Germanium SurfacesJournal of Applied Physics, 1967
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965