Structure of the 2H-Ain/6H-SiC Interface
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Steps at the AIN/SiC interface have been investigated by HREM. Some of them do not introduce any defects. Others steps present a dislocation character which can contribute to relieve the strain due to the lattice mismatch. A third kind of steps gives rise to a prismatic planar fault for which a model is given. A reaction between prismatic and basal stacking faults is analyzed.Keywords
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