A new approach to photovoltaic junction formation by using pulse implantation doping technique
- 1 January 1982
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 43 (9) , 1353-1358
- https://doi.org/10.1051/jphys:019820043090135300
Abstract
The paper presents the first demonstration of a new method of forming photovoltaic p-n junction in silicon by the « Pulse Implantation Doping (PID) » technique. In this technique, an intense ion pulse provides both the dose necessary for doping and the portion of energy required to recrystallize a damage-free, doped surface layer. The ion beam pulses within the range of one microsecond and of a current density within the range of several ka/cm2 are generated by a Rod Plasma Injector — the machine developed at INR — Swierk for the research in controlled ion beam fusion. The best solar cells obtained using a non-optimized PID process with boron as dopant have efficiencies of 4.5-4.7 %, without antireflection coating at AM1 conditionKeywords
This publication has 1 reference indexed in Scilit:
- Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiationApplied Physics Letters, 1978