Scattering Mechanisms in Heavily Doped Semiconductors. II. Effect of Mass Anisotropy and Multiple Scattering
- 1 August 1980
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 49 (2) , 578-588
- https://doi.org/10.1143/jpsj.49.578
Abstract
No abstract availableKeywords
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