SEU Sensitivity of Power Converters with MOSFETs in Space

1 January 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 34 (6) , 1792-1795
https://doi.org/10.1109/TNS.1987.4337556

Abstract

This paper presents the results of an investigation into the survivability of power MOSFETs in space. Seventy-two of these devices are presently in geosynchronous orbit on board six communications spacecraft, and operating at 70V which is 70% of the nominal breakdown voltage. No failures have occurred after 94536 device-days in space. The irradiation of discrete parts as well as the prototype flight power converter, containing the same part types, by iron particles with a LET of 10 MeV-cm2/mg, and an iron spectrum with a maximum LET of 26 showed these Hi-Rel ("S") flight parts to be relatively harder than the same type of devices previously ground tested. This appears to be the explanation for the lack of failures in space.

Keywords

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