An experimental method for the determination of the saturation point of a MOSFET

1 February 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (2) , 247-251
https://doi.org/10.1109/T-ED.1984.21508

Abstract

This paper presents an extraction technique which determines the drain voltages and currents at saturation directly from experimental data. The technique makes use of both drain current and conductance data. In addition to VDSSand IDSS, parameters for the characterization of the saturation region of operation may be extracted via this technique.

Keywords

EXPERIMENTAL METHOD
DRAIN CURRENT
DRAIN VOLTAGES
TECHNIQUE MAKES
SATURATION POINT
MAKES USE
SATURATION DIRECTLY
VDSSAND IDSS

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