Silicides for Highly Integrated Memory and Logic Circuits
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Investigations of the resistivity of TiSi/p+ contacts and their optimisation in a 0.5 um CMOS technologyMicroelectronic Engineering, 1992
- WSi2 and CoSi2 as diffusion sources for shallow-junction formation in siliconJournal of Applied Physics, 1991
- Metal-dopant-compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistanceJournal of Applied Physics, 1991
- TaSi 2 gate for VLSI CMOS circuitsIEEE Transactions on Electron Devices, 1984