Effect of Hydrostatic Pressure on the Emission from Gallium Arsenide Lasers
- 1 October 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (10) , 2955-2957
- https://doi.org/10.1063/1.1729101
Abstract
The pressure shift of both the coherent and the incoherent emission of GaAs junction lasers has been measured at about 200°K. The peak of the spontaneous emission shifts by +1.09×10−5 eV/atm, which is in agreement with the pressure coefficient of the band gap in GaAs determined by experiments based on the change of resistance under pressure. The shift of the coherent modes is much smaller, namely, +2.96×10−6 eV/atm. The effect of the compressibility on the latter shift is shown to be negligible. It is concluded from considerations of a simple model that the shift of the coherent radiation is primarily due to a change of the dielectric constant with pressure.This publication has 3 references indexed in Scilit:
- Effect of Pressure on the Energy Levels of Impurities in Semiconductors. I. Arsenic, Indium, and Aluminum in SiliconPhysical Review B, 1962
- Band Structure of the Intermetallic Semiconductors from Pressure ExperimentsJournal of Applied Physics, 1961
- Elastic Moduli of Single-Crystal Gallium ArsenideJournal of Applied Physics, 1959