Sb/GaSb heterostructures and multilayers

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Abstract
We have successfully synthesized heterojunctions and elementary multilayered structures of the semimetal‐semiconductor system Sb/GaSb using molecular beam and migration enhanced epitaxies. The study is motivated in part by the potential for producing an indirect narrow‐gap semiconductor, in which a confinement‐induced positive energy gap in the Sb layers will lead to highly attractive properties for nonlinear optical switches operating in the infrared. One may also be able to exploit the long mean free path in Sb (up to 2 μm) in studying quantum transport phenomena. X‐ray diffraction confirms the ordered growth of GaSb/Sb/GaSb multilayers, and field‐dependent magnetotransport measurements yield electron and hole mobilities ≥3×104 cm2/V s in Sb thin films.