Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC
- 15 June 2004
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 457-460, 461-464
- https://doi.org/10.4028/www.scientific.net/msf.457-460.461
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- High-purity semi-insulating 4H-SiC grown by the seeded-sublimation methodJournal of Electronic Materials, 2002
- Divacancy inandAn extremely stable defectPhysical Review B, 2002
- Structure of the silicon vacancy inafter annealing identified as the carbon vacancy–carbon antisite pairPhysical Review B, 2001
- Comprehensiveab initiostudy of properties of monovacancies and antisites in 4H-SiCJournal of Physics: Condensed Matter, 2001
- Positron Annihilation Spectroscopic Studies of 6H Silicon CarbideMaterials Science Forum, 2001
- Radiation induced defects in CVD-grown 3C-SiCIEEE Transactions on Nuclear Science, 1990
- Passage Effects in Paramagnetic Resonance ExperimentsBell System Technical Journal, 1960