Fast response InP/InGaAsP heterojunction phototransistors
- 5 March 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (5) , 178-180
- https://doi.org/10.1049/el:19810126
Abstract
InP/InGaAsP heterojunction phototransistors with a base terminal have been fabricated, showing hFE, values of up to 2000. These devices allow us to trade gain for speed by charge extraction from the base. At a voltage gain of 8 to 9 a response time of 2 ns is observed.Keywords
This publication has 1 reference indexed in Scilit:
- LPE-Grown InGaAsP/InP heterojunction bipolar phototransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979