Single and Dual Gate GaAs FET Integrated Amplifiers in C Band

1 January 1972

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/gmtt.1972.1123057

Abstract

This paper outlines some aspects of the device characterisation, circuit design and realisation of hybrid integrated amplifiers in C Band. The performance of designs at 5 GHz employing single and dual-gate GaAs FETs are presented.

Keywords

GALLIUM ARSENIDE
FETS
TESTING
CERAMICS
CIRCUIT TOPOLOGY
NOISE FIGURE
CAPACITORS
BONDING
CIRCUIT SYNTHESIS
IMPEDANCE

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