Degradation mechanisms induced by temperature in power MESFETs

4 July 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (14) , 600-601
https://doi.org/10.1049/el:19850423

Abstract

Two independent failure mechanisms, mainly induced by temperature, were observed in unpassivated, Au-metallised, commercially available power MESFETs. They result in a high gate/source (drain) leakage and in an increase in the open channel resistance, and may explain the ‘burn-out’ of the devices in practical applications.

Keywords

DEGRADATION MECHANISMS
TEMPERATURE INDUCED FAILURES
BURN-OUT
INDEPENDENT FAILURE MECHANISMS
AU-METALLISED
POWER MESFETS
GATE SOURCE LEAKAGE
III-V SEMICONDUCTORS
GAAS
OPEN CHANNEL RESISTANCE
UNPASSIVATED

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