Dependence of Magnetoresistance on Preparation Conditions and Annealing in Co/Cu Multilayers.

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Abstract
Film structures of sputter-deposited Co/Cu multilayers depended strongly on preparation conditions Such as the Ar gas pressure (PAr) and the substrate bias voltage (VB). For the films deposited at VB=0V, the interfaces were flat and (111) plane orientation was good at low PAr (200) textured grains were also Observed for films with low PAr. The (111) orientation was better for -30-V films than for 0-V films. The interface was flat at high PAr, different from 0-V films. Giant magnetoresistance (GMR) depended strongly on the layer flatness, the density of the films, and the existence of crystal grains with fcc (200) texture. The effects of annealing on the film structures and the GMR were also investigated. Ten minutes‘ annealing at 200°C in a vacuum did not change the film structure very much, but the first GMR peak value of 0-V films decreased significantly, in contrast to the stable second GMR peak.

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