PLhenomenological model of grain-boundary trapping states in polycrystalline silicon under optical illumination
- 1 August 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (8) , 699-705
- https://doi.org/10.1016/0038-1101(82)90197-6
Abstract
No abstract availableKeywords
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