Transport Properties of Cubic Semiconductors with Nonparabolic Energy Bands

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Abstract
Transport phenomena are considered in a semiconductor crystal having cubic symmetry and an arbitrary relation between energy and wave number. The theory is formulated in terms of three basic transport tensors. Expressions for galvanomagnetic and thermomagnetic effects in the limiting cases of weak and strong magnetic fields are obtained. The results apply both to the many‐ellipsoid cubic energy bands of Si and Ge and to the nonparabolic band structure of III–V compounds.