Plasma etching characteristics of sputtered MoSi2 films
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (5) , 466-468
- https://doi.org/10.1063/1.91967
Abstract
Plasma etching of sputtered MoSi2 films using CF4/O2 mixtures was studied in a barrel‐type reactor. The etch rate in pure CF4 was very low (≲100 Å/min) and insensitive to applied power. The addition of a small percentage (2 dramatically increased the etch rate. For CF4/4% O2, and etch rate of ∼920 Å/min was measured at 100 W. A near‐linear etch rate dependence on rf power was observed, indicating that the controlling factor is the generation rate of etching radicals. For CF4/8% O2, the etch rate nearly doubled and showed saturation at high rf power, indicating the increased role of the surface reaction rate. Postdeposition anneal results in a 10–20% decrease in etch rate. An etch rate selectivity of 14–22 for MoSi2 vs SiO2 and of 2–3 for doped poly‐Si vs MoSi2 were measured.Keywords
This publication has 4 references indexed in Scilit:
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