Vapor-solid distribution relation in MOCVD GaAsxP1−x and InAsxP1−x
- 1 January 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (1) , 9-11
- https://doi.org/10.1016/0022-0248(85)90037-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Organometallic VPE Growth of InAs1-xSbxon InAsJapanese Journal of Applied Physics, 1980
- Epitaxial Growth and Characterization of Pyrolytic-Grown GaAs[sub 1−x]P[sub x] for Electroluminescent DiodesJournal of the Electrochemical Society, 1973
- Vapor Growth of GaAs1-xPxby the Pyrolysis of Ga(CH3)3, AsH3and PH3Japanese Journal of Applied Physics, 1972