Beam Lead Tunnel Diode Amplifiers on Microstrip

1 January 1970

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 212-216
https://doi.org/10.1109/gmtt.1970.1122808

Abstract

In terms of the number of components, the tunnel diode amplifier is one of the least complex RF amplifiers available. It has never achieved broad acceptance because of high cost, poor reliability, and problems of instability. The recent success of planar fabrication techniques promises to eliminate these drawbacks. By integrating planar tunnel diodes with printed microwave circuitry, reliable low-cost, high-performance tunnel diode amplifiers should be feasible.

Keywords

DIODES
MICROSTRIP
INDUCTANCE
RADIOFREQUENCY AMPLIFIERS
STRIPS
PACKAGING
COSTS
INTEGRATED CIRCUIT RELIABILITY
COAXIAL COMPONENTS
LOW-NOISE AMPLIFIERS

This publication has 2 references indexed in Scilit:

Microwave Amplifiers Employing Integrated Tunnel-Diode Devices
IEEE Transactions on Microwave Theory and Techniques, 1967
Design principles and construction of planar Ge Esaki diodes
Solid-State Electronics, 1967