Room-temperature epitaxial growth of Ag(110)/GaAs(100) films
- 13 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (2) , 174-176
- https://doi.org/10.1063/1.106983
Abstract
Thin Ag films were deposited in a partially ionized beam vacuum system on undoped GaAs(100) substrates at room temperature. The x‐ray pole‐figure technique was used to characterize the crystal orientation. The epitaxial relationship observed was Ag(110)/GaAs(100) with Ag[100]//GaAs[1̄10]. The epitaxy was achieved at a vacuum in the 10−6 Torr range with no in situ cleaning. The substrates were prepared only by a HF dip immediately prior to deposition.Keywords
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