Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture

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Abstract
The deposition rate of polycrystalline silicon from a mixture is significantly influenced by the addition of , ,and . At a deposition temperature of 680 °C causes a decrease by a factor of 7, causes a decrease by a factor of 2.5, while a two times higher deposition rate is obtained with addition. Out of these three dopant hydrides and do not affect the activation energy of the deposition reaction compared to undoped growth (37 kcal/mole). The Arrhenius plot for the deposition of silicon from a mixture shows two activation energies: 20 kcal/mole at and 7 kcal/mole below 620°C. The experimentally found minimum values of the resistivity of doped polycrystalline silicon can be explained in terms of solid solubility and carrier mobility. At deposition temperatures below 700 °C with and without addition of dopants the polycrystalline silicon surface is mirror‐like. Significant differences have, however, been observed by electron microscopy. Compared to undoped growth boron was found to lower the etch rate of the polycrystalline silicon film markedly.

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