Light-Induced Charge Separation at Sensitized Sol−Gel Processed Semiconductors
- 1 November 1997
- journal article
- review article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 9 (11) , 2341-2353
- https://doi.org/10.1021/cm9703177
Abstract
No abstract availableThis publication has 124 references indexed in Scilit:
- Interfacial Electron Transfer in Colloidal SnO2 Hydrosols Photosensitized by Electrostatically and Covalently Attached Ruthenium(II) Polypyridine ComplexesThe Journal of Physical Chemistry, 1994
- Fast interfacial electron transfer: evidence for inverted region kinetic behaviorJournal of the American Chemical Society, 1993
- Preparation and properties of uniform-coated colloidal particles. 6. Titania on zinc oxideLangmuir, 1991
- The impact of semiconductors on the concepts of electrochemistryElectrochimica Acta, 1990
- Conversion of Light into Electricity with Trinuclear Ruthenium Complexes Adsorbed on Textured TiO2 FilmsHelvetica Chimica Acta, 1990
- Maximum entropy analysis of quasielastic light scattering from colloidal dispersionsThe Journal of Chemical Physics, 1986
- A general model for dispersed kinetics in heterogeneous systemsJournal of the American Chemical Society, 1985
- High-pressure studies of the dye-sensitized photocurrent spectrum of titanium dioxideThe Journal of Physical Chemistry, 1984
- Chemically modified electrodes in dye-sensitized photogalvanic cellsJournal of the American Chemical Society, 1980
- Sensitization of charge injection into semiconductors with large band gapElectrochimica Acta, 1968