RF Nonlinear Device Characterization Yields Improved Modeling Accuracy
- 23 March 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 86, 381-384
- https://doi.org/10.1109/mwsym.1986.1132198
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Modelling frequency dependence of output impedance of a microwave MESFET at low frequenciesElectronics Letters, 1985
- A GaAs FET Model for Large-Signal ApplicationsIEEE Transactions on Microwave Theory and Techniques, 1984