GaAs growth by vapour phase transport: II. Interpretation of the growth of the {001} faces by the adsorption of gallium monochloride and arsenic molecules
- 30 June 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 29 (2) , 187-194
- https://doi.org/10.1016/0022-0248(75)90223-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- GaAs growth by vapour phase transport: I. Study of the effect of supersaturation and surface adsorptionJournal of Crystal Growth, 1975
- Epitaxial GaAs Kinetic Studies: {001} OrientationJournal of the Electrochemical Society, 1970
- Influence of Substrate Temperature on GaAs Epitaxial Deposition RatesJournal of the Electrochemical Society, 1968
- Structure, growth and morphology of crystals*Zeitschrift für Kristallographie, 1963
- The crystal structure of gallium dichlorideJournal of Inorganic and Nuclear Chemistry, 1957