High-barrier Al/p-Si Schottky diodes
- 1 September 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (9) , 462-464
- https://doi.org/10.1109/edl.1985.26193
Abstract
Sequential implantation of argon ions and low-energy hydrogen ions has been found to yield Schottky barriers of exceptionally high values on p-type silicon. The interaction of these ions in Si is quite complex, involving donor defect generation, defect passivation, and acceptor dopant neutralization. The apparent synergism of these specific implants has resulted in Al/p-Si Schottky diodes with an effective barrier height as high as 0.83 eV, among the highest value reported for any metal/p-Si contact.Keywords
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