Transport properties of tungsten-doped VO2
- 15 February 1976
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 54 (4) , 408-412
- https://doi.org/10.1139/p76-046
Abstract
Measurements of DC and AC conductivity and thermopower show that VO2: W can be treated as a conventional n-type extrinsic semiconductor with a donor level 0.06–0.08 eV below the conduction band. For samples with an impurity content from 0.67 → 1.70 at.% W, an effective mass ratio m*/m of 65 ± 10 and a compensation ratio of 0.7 ± 0.1 are deduced from conventional semiconductor theory assuming donor exhaustion just below the metal semiconductor transition.Keywords
This publication has 0 references indexed in Scilit: