Excitation Spectra of Lithium Donors in Silicon and Germanium
- 3 May 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 138 (3A) , A882-A893
- https://doi.org/10.1103/physrev.138.a882
Abstract
The excitation spectra of lithium in silicon and germanium have been measured. These spectra exhibit excitation lines which indicate that the excited states of lithium are similar to those of the Group-V impurities. For oxygen-free silicon and germanium, the lithium excitations observed occur at energies close to those of the Group-V transitions which originate from the upper ground states of these impurities. This indicates that the chemical splitting of the ground state of lithium in silicon and germanium may be very small. The effect of uniaxial stress on the excitation spectrum of lithium in silicon has been examined. The experimental results for lithium in oxygen-free silicon are interpreted as follows: The site symmetry of the isolated lithium is tetrahedral; the ground state is an "inverted" Group-V-like ground state, the state lying 1.8±0.1 meV above the state. For lithium in oxygen-containing silicon, zero-stress and uniaxialstress measurements indicate that the ground state is Group-V-like with the state lying 7.7±0.1 meV above the state. The spectra of lithium in germanium and oxygen-containing silicon exhibit lines which do not fit the Group-V pattern.
Keywords
This publication has 12 references indexed in Scilit:
- Effect of Uniaxial Stress on the Excitation Spectra of Donors in SiliconPhysical Review B, 1965
- An Optical Determination of the Ground-State Splittings of Group V Impurities in GermaniumPhysical Review B, 1964
- Optical determination of the valley-orbit splitting of the ground state of donors in siliconSolid State Communications, 1964
- Theory of Diffusion and Equilibrium Position of Interstitial Impurities in the Diamond LatticePhysical Review B, 1962
- Polarizer for the Far-Infrared RegionJournal of the Optical Society of America, 1960
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957
- Theory of Transport Effects in Semiconductors: ThermoelectricityPhysical Review B, 1956
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956
- Diffusion of Lithium into Germanium and SiliconPhysical Review B, 1953