Evidence for
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1227-1233
- https://doi.org/10.1109/23.25444
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Time-dependent evolution of interface traps in hot-electron damaged metal/SiO2/Si capacitorsIEEE Electron Device Letters, 1987
- Two distinct interface trap peaks in radiation-damaged metal/SiO2/Si structuresApplied Physics Letters, 1987
- Radiation-Induced Interface Traps in Mo/SiO2/Si CapacitorsIEEE Transactions on Nuclear Science, 1987
- Radiation Response of MOS Capacitors Containing Fluorinated OxidesIEEE Transactions on Nuclear Science, 1987
- Interface traps and P b centers in oxidized (100) silicon wafersApplied Physics Letters, 1986
- Dependence of X-Ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS StructuresIEEE Transactions on Nuclear Science, 1984