Oxygen-Controlled Conduction in Thin Films of Cuprous Iodide: A Mixed Valency Anion Semiconductor

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Abstract
Oxygen present in cuprous iodide greatly increases the electrical conductivity. Copper films were formed with differing oxygen contents by copper vapor condensation at various oxygen pressures. After iodination to the conductivity was found proportional to the 1/8.4 power of the oxygen pressure during condensation. Cuprous iodide with oxygen created conductors is a mixed valency anion semiconductor.