Nature, origin and effect of dislocations in epitaxial semiconductor layers
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 407-425
- https://doi.org/10.1016/0022-0248(78)90470-0
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Scanning electron microscope EBIC and CL micrographs of dislocations in GaPJournal of Materials Science, 1977
- Carrier recombination at dislocations in epitaxial gallium phosphide layersJournal of Materials Science, 1977